Spintronic devices are electronic components consisting of hybrid ferromagnetic-ferroelectric and ferromagnetic-gate oxide material systems that rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has significant advantages including enhanced functionality and low power consumption. In the proposed project, we will explore electric-field control of magnetic properties including the writing and erasure of ferromagnetic domains and the motion of magnetic domain walls. The most successful structures will be integrated into prototype spintronic devices. State-of-the-art facilities for device fabrication and nanomicroscopy at Aalto University will be available to the AGH partners to advance their research activities in this emerging and technologically relevant field.